Secondary Ion Mass Spectrometry (SIMS)

Secondary ion mass spectroscopy is operated either in the dynamic mode (DSIMS) or the static mode (SSIMS). DSIMS is useful for profiling impurity and trace elements through films and interfaces. SSIMS is useful for characterizing polymeric materials and only measures the outermost molecular layer of a specimen.

Silicone detected at delamination interface between chip and package

Dopant and impurity profile in photovoltaic film

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We focus on surface analysis and material characterization analysis by using Auger, ESCA, XPS, SIMS, FTIR, SEM, EDS, and AFM