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          Instrument Specifications                                                           Capabilities Note
Capability
XPS/ESCA
Auger
EDS/EDX
SIMS
Principal
   Input
   Output
X-rays
Electrons
Electrons
Electrons
Electrons
X-rays
Ions
Ions
Model Kratos Axis HSi PHI 610 iXRF Model 510D PHI SIMS II
Information Elemental
Chemical
Depth profile
Elemental
Chemical
Depth profile
Elemental
Best mapping
Line scanning
Elemental (DSIMS)
Chemical (SSIMS)
Isotopic
Depth profile
Smallest area 30 µm diameter 1 µm diameter
1-5 µm diameter 200 µm diameter
Largest area 2 mm x 0.8 mm 1 mm diameter 50 x 70 :m 1 x 1 cm
Smallest feature ~ 25 µm 0.5 µm 1 µm 400 µm
Smallest sample 10 µm (fiber) 10 µm (fiber) 1 mm 10 µm (fiber)
Largest Sample ¼” x 4”
7 mm thick
2.5 cm diameter
5 mm thick
2.5-5 cm or
10 cm
2.5 cm diameter
5 mm thick
Analysis depth 1-10 nm with tilt
3-30 monolayers
5-10 nm
10-15 monolayers
1-5 µm @ 20 keV <3 nm (SSIMS)
surface monolayers
any depth (DSIMS)
Spatial resolution 10 µm lateral
1 Å depth
0.2 µm lateral
<5 nm depth
10 nm 1 mm (SSIMS)
200 µm dyn. Image
5 nm depth
Spectral resolution 0.48 eV; Ag 3d5/2 dE/E = 0.3% 145 eV @ Mn 1 amu
Sensitivity 0.005-1 atom% 0.1-2 atom% 0.05-2% <<1 atom%(DSIMS)
Accuracy ±20% ±20% ±5% with standards ±100%
Precision ±0.5% ±5% ±2% ±1%
Best samples All nonvolatile Conductors
Thin films
Conductive SSIMS: well ordered polymers
DSIMS: oxides
Worst samples Outgassing
Nonhomogeneous
Outgassing
Thick insulators
Outgassing Outgassing
Best elements Heavy elements S, Cl, Ar, K, Pd, Ag, Cd, In, Sn High Z Halogen (-ions)
Noble metal (+ions)
511 amu max.
Worst elements No H or He
Interferences: B/P, Ba/Co, Mn/Ni
No H or He
Interferences: S/Mo, N/Ti, Cr/O
Low Z (no Z<B) Nobel gases
High amu
Matrix effects Little Moderate Moderate Large
Quantification Excellent Good Good Good with close standard
Analysis time 20 min – 2 hr 15 min – 2 hr 10 min – 1 hr 15 min – 2 hr
Sputter rate >10 nm/min SiO2@ 2 kV with Ar+ >10 nm/min SiO2@ 2 kV with Ar+ N/A >10 nm/min SiO2@ 2 kV with Ar+
Destructive No No No Yes
Unknown survey Good Good Good Poor
Magnification   5,000X    
             
             Instrument Specifications                                                            Capabilities Note
Capability
FTIR
Raman
SEM
FESEM
SPM
Principal
Input
Output
Absorption
IR
IR
Light
Light
Electrons
Electrons
Electrons
Electrons
AFM & SPM
Piezoelectric
Feedback
Model
Thermo Scientific
Nicolet iN10MX
Renishaw
RM1000
JEOL 6400
JEOL 6320F
Veeco DI Dimension 3100 Nanoscope™ IV
Information
Chemical
Chemical
Topographical
Atomic # (Z) with backscatter
Topographical
Topographical
Magnetic field intensity
Smallest area
10 µm diameter
1 µm
1.5 µm diameter
100 nm
No limit
Largest area
300 µm diameter
20 µm
7.5 mm diameter
100 µm
125 x 125 µm
Smallest feature
10 mm (5 µm fiber)
0.5 µm
10 nm
1 nm
5 nm
Smallest sample
10 µm
0.5 µm
1 mm
1 mm
5 µm
Largest Sample
15 x 30 cm
2” tall
3” x 3”
2.5-5 cm or
10 cm
2.5-5 cm
1.5 cm diameter x 1 cm high or 15 cm long (Dim 3000)
Analysis depth
2 µm - mms
2 µm
2-5 nm
2-5 nm
5 µm max. relief
Spatial resolution
  1 µm
10 nm @ 100,000X
1.2 nm @ 300,000X
<1 nm lateral
<1 Å vertical
Spectral resolution
0.5 cm-1
4 cm-1      
Sensitivity
1 ppm
1 pp thousand
    1 Å vertical
Accuracy
    ±2%
±2%
±1% or 5 nm
Precision
    ±1%
±1%
±2%
Best samples
Organics
Liquids & solids
KBr pellets
Organics (double bonds)
Solids
Conductive
Conductive
Better on insulators than SEM
Smooth
Worst samples
Opaque in IR
Transparent in IR
Multicomponent
Fluorescing
Materials
Mixtures
Outgassing
Outgassing
Macroscopically rough
Mobile surface features
Best elements
Requires molecular bonds
Requires molecular bonds
Highest )Z for backscatter
N/A  
Worst elements
Weak IR absorber
Metal compounds
Salts
Metals,
Minerals
  N/A  
Matrix effects
Water
Mixtures a problem      
Quantification
Poor
Poor
Good
Excellent
Excellent
Analysis time
10-30 min
30-60 min
10-30 min
10-30 min
30-60 min
Destructive
No
Laser may melt samples
No
No
No
Unknown survey          
Magnification
    15-300,000X
1,000-650,000X
200,000X

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