Capabilities

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Instrument Specifications

Capabilities Note

Capability
XPS/ESCA
Auger
EDS/EDX
SIMS
Principal
   Input
   Output
X-rays
Electrons
Electrons
Electrons
Electrons
X-rays
Ions
Ions
ModelKratos Axis HSiPHI 610iXRF Model 510DPHI SIMS II
InformationElemental
Chemical
Depth profile
Elemental
Chemical
Depth profile
Elemental
Best mapping
Line scanning
Elemental (DSIMS)
Chemical (SSIMS)
Isotopic
Depth profile
Smallest area30 µm diameter1 µm diameter
1-5 µm diameter200 µm diameter
Largest area2 mm x 0.8 mm1 mm diameter50 x 70 µm1 x 1 cm
Smallest feature~ 25 µm0.5 µm1 µm400 µm
Smallest sample10 µm (fiber)10 µm (fiber)1 mm10 µm (fiber)
Largest Sample¼” x 4”
7 mm thick
2.5 cm diameter
5 mm thick
2.5-5 cm or
10 cm
2.5 cm diameter
5 mm thick
Analysis depth1-10 nm with tilt
3-30 monolayers
5-10 nm
10-15 monolayers
1-5 µm @ 20 keV<3 nm (SSIMS)
surface monolayers
any depth (DSIMS)
Spatial resolution10 µm lateral
1 Å depth
0.2 µm lateral
<5 nm depth
10 nm1 mm (SSIMS)
200 µm dyn. Image
5 nm depth
Spectral resolution0.48 eV; Ag 3d5/2dE/E = 0.3%145 eV @ Mn1 amu
Sensitivity0.005-1 atom%0.1-2 atom%0.05-2%<<1 atom%(DSIMS)
Accuracy±20%±20%±5% with standards±100%
Precision±0.5%±5%±2%±1%
Best samplesAll nonvolatileConductors
Thin films
ConductiveSSIMS: well ordered polymers
DSIMS: oxides
Worst samplesOutgassing
Nonhomogeneous
Outgassing
Thick insulators
OutgassingOutgassing
Best elementsHeavy elementsS, Cl, Ar, K, Pd, Ag, Cd, In, SnHigh ZHalogen (-ions)
Noble metal (+ions)
511 amu max.
Worst elementsNo H or He
Interferences: B/P, Ba/Co, Mn/Ni
No H or He
Interferences: S/Mo, N/Ti, Cr/O
Low Z (no Z<B)Nobel gases
High amu
Matrix effectsLittleModerateModerateLarge
QuantificationExcellentGoodGoodGood with close standard
Analysis time20 min – 2 hr15 min – 2 hr10 min – 1 hr15 min – 2 hr
Sputter rate>10 nm/min SiO2@ 2 kV with Ar+>10 nm/min SiO2@ 2 kV with Ar+N/A>10 nm/min SiO2@ 2 kV with Ar+
DestructiveNoNoNoYes
Unknown surveyGoodGoodGoodPoor
Magnification 5,000X  

Instrument Specifications

Capabilities Note

CapabilityFTIRRamanSEMFESEMSPM
Principal
Input
Output
Absorption
IR
IR
Light
Light
Electrons
Electrons
Electrons
Electrons
AFM & SPM
Piezoelectric
Feedback
ModelThermo Scientific
Nicolet iN10MX
Renishaw
RM1000
JEOL 6400JEOL 6320FVeeco DI Dimension 3100 Nanoscope™ IV
InformationChemicalChemicalTopographical
Atomic # (Z) with backscatter
TopographicalTopographical
Magnetic field intensity
Smallest area10 µm diameter1 µm1.5 µm diameter100 nmNo limit
Largest area300 µm diameter20 µm7.5 mm diameter100 µm125 x 125 µm
Smallest feature10 mm (5 µm fiber)0.5 µm10 nm1 nm5 nm
Smallest sample10 µm0.5 µm1 mm1 mm5 µm
Largest Sample15 x 30 cm2” tall
3” x 3”
2.5-5 cm or
10 cm
2.5-5 cm1.5 cm diameter x 1 cm high or 15 cm long (Dim 3000)
Analysis depth2 µm – mms2 µm2-5 nm2-5 nm5 µm max. relief
Spatial resolution 1 µm10 nm @ 100,000X1.2 nm @ 300,000X<1 nm lateral
<1 Å vertical
Spectral resolution0.5 cm-14 cm-1   
Sensitivity1 ppm1 pp thousand  1 Å vertical
Accuracy  ±2%±2%±1% or 5 nm
Precision  ±1%±1%±2%
Best samplesOrganics
Liquids & solids
KBr pellets
Organics (double bonds)
Solids
ConductiveConductive
Better on insulators than SEM
Smooth
Worst samplesOpaque in IR
Transparent in IR
Multicomponent
Fluorescing
Materials
Mixtures
OutgassingOutgassingMacroscopically rough
Mobile surface features
Best elementsRequires molecular bondsRequires molecular bondsHighest )Z for backscatterN/A 
Worst elementsWeak IR absorber
Metal compounds
Salts
Metals,
Minerals
 N/A 
Matrix effectsWaterMixtures a problem   
QuantificationPoorPoorGoodExcellentExcellent
Analysis time10-30 min30-60 min10-30 min10-30 min30-60 min
DestructiveNoLaser may melt samplesNoNoNo
Unknown survey     
Magnification  15-300,000X1,000-650,000X200,000X

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