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Instrument Specifications

Capabilities Note

Capability
XPS/ESCA
Auger
EDS/EDX
SIMS
Principal
Input
Output
X-rays
Electrons
Electrons
Electrons
Electrons
X-rays
Ions
Ions
Model Kratos Axis HSi PHI 610 iXRF Model 510D PHI SIMS II
Information Elemental
Chemical
Depth profile
Elemental
Chemical
Depth profile
Elemental
Best mapping
Line scanning
Elemental (DSIMS)
Chemical (SSIMS)
Isotopic
Depth profile
Smallest area 30 µm diameter 1 µm diameter 1-5 µm diameter 200 µm diameter
Largest area 2 mm x 0.8 mm 1 mm diameter 50 x 70 µm 1 x 1 cm
Smallest feature ~ 25 µm 0.5 µm µm 400 µm
Smallest sample 10 µm (fiber) 10 µm (fiber) 1 mm 10 µm (fiber)
Largest Sample ¼” x 4”
7 mm thick
2.5 cm diameter
5 mm thick
2.5-5 cm or
10 cm
2.5 cm diameter
5 mm thick
Analysis depth 1-10 nm with tilt
3-30 monolayers
5-10 nm
10-15 monolayers
1-5 µm @ 20 keV <3 nm (SSIMS)
surface monolayers
any depth (DSIMS)
Spatial resolution 10 µm lateral
1 Å depth
0.2 µm lateral
<5 nm depth
10 nm 1 mm (SSIMS)
200 µm dyn. Image
5 nm depth
Spectral resolution 0.48 eV; Ag 3d5/2 dE/E = 0.3% 145 eV @ Mn 1 amu
Sensitivity 0.005-1 atom% 0.1-2 atom% 0.05-2% <<1 atom%(DSIMS)
Accuracy ±20% ±20% ±5% with standards ±100%
Precision ±0.5% ±5% ±2% ±1%
Best samples All nonvolatile Conductors
Thin films
Conductive SSIMS: well ordered polymers
DSIMS: oxides
Worst samples Outgassing
Nonhomogeneous
Outgassing
Thick insulators
Outgassing Outgassing
Best elements Heavy elements S, Cl, Ar, K, Pd, Ag, Cd, In, Sn High Z Halogen (-ions)
Noble metal (+ions)
511 amu max.
Worst elements No H or He
Interferences: B/P, Ba/Co, Mn/Ni
No H or He
Interferences: S/Mo, N/Ti, Cr/O
Low Z (no Z<B) Nobel gases
High amu
Matrix effects Little Moderate Moderate Large
Quantification Excellent Good Good Good with close standard
Analysis time 20 min – 2 hr 15 min – 2 hr 10 min – 1 hr 15 min – 2 hr
Sputter rate >10 nm/min SiO2@ 2 kV with Ar+ >10 nm/min SiO2@ 2 kV with Ar+ N/A >10 nm/min SiO2@ 2 kV with Ar+
Destructive No No No Yes
Unknown survey Good Good Good Poor
Magnification 5,000X

Instrument Specifications

Capabilities Note

Capability FTIR SEM FESEM SPM
Principal
Input
Output
Absorption
IR
IR
Electrons
Electrons
Electrons
Electrons
AFM & SPM
Piezoelectric
Feedback
Model Thermo Scientific
Nicolet iN10MX
JEOL 6400 JEOL 6320F Veeco DI Dimension 3100 Nanoscope™ IV
Information Chemical Topographical
Atomic # (Z) with backscatter
Topographical Topographical
Magnetic field intensity
Smallest area 10 µm diameter 1.5 µm diameter 100 nm No limit
Largest area 300 µm diameter 7.5 mm diameter 100 µm 125 x 125 µm
Smallest feature 10 mm (5 µmfiber) 10 nm 1 nm 5 nm
Smallest sample 10 µm 1 mm 1 mm µm
Largest Sample 15 x 30 cm 2.5-5 cm or
10 cm
2.5-5 cm 1.5 cm diameter x 1 cm high or 15 cm long (Dim 3000)
Analysis depth µm – mms 2-5 nm 2-5 nm µm max. relief
Spatial resolution 10 nm @ 100,000X 1.2 nm @ 300,000X <1 nm lateral
<1 Å vertical
Spectral resolution 0.5 cm-1
Sensitivity 1 ppm 1 Å vertical
Accuracy ±2% ±2% ±1% or 5 nm
Precision ±1% ±1% ±2%
Best samples Organics
Liquids & solids
KBr pellets
Conductive Conductive
Better on insulators than SEM
Smooth
Worst samples Opaque in IR
Transparent in IR
Multicomponent
Outgassing Outgassing Macroscopically rough
Mobile surface features
Best elements Requires molecular bonds Highest )Z for backscatter N/A
Worst elements Weak IR absorber
Metal compounds
Salts
N/A
Matrix effects Water
Quantification Poor Good Excellent Excellent
Analysis time 10-30 min 10-30 min 10-30 min 30-60 min
Destructive No No No No
Unknown survey
Magnification 15-300,000X 1,000-650,000X 200,000X
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